Varvas J., Nirk T. High–temperature conductivity of undoped and copper–doped cadmium selenide // Phys. status solidi (a). – 1976. – Vol. 33, № 1. – P. 75

Martinaitis A. et al. Defect structure of CdSe in selenium vapour // Ibid. – 1978. – Vol. 47, № 1. – P. 187–194.

Baubinas G.M. et al. Compensation mechanisms related to boron implantation in GaAs // J. Appl. Phys. – 1984. – Vol. 53, № 12. – P. 8706–8715.

Smith F.T.J. Electrically active point defects in cadmium telluride // Met. Trans. – 1970 a. – Vol. 1. – P. 620–621.

Chern S.S. et al. The defect structure of СdTe: Hall data // J. Solid State Chem. – 1975. – Vol. 14, № 1. – P. 33–43.

Nobel D. de. Phase equilibria and semiconducting properties of cadmium telluride // Phil. Res. Rept. – 1959. – Vol. 14, № 4. – P. 361–399.

Jasinskaite R. et al. Native acceptor defects in chlorine doped single crystals of CdTe // Phys. status solidi (a). – 1984. – Vol. 82, № 2. – P. K199–K204.

Jasinskaite R. et al. Specially purified CdTe: dependence of high–temperature electrical properties on Te2 vapour pressure // Solid State Comm. – 1986. – Vol. 58, № 10. – P. 681–682.

Furgolle B. et al. Optical properties of a donor–cadmium vacancy complex in CdTe // Solid State Comm. – 1974. – Vol. 14, № 11. – P. 1237–1240.

Hoschl P. et al. Preparation of cadmium telluride single crystals for nuclear detectors // Ibid. – 1975. – Vol. 25B, N 5. – P. 585–596.

Krol A., Zielinska R. A new defect complex in CdTe // Phys. status solidi (b). – 1984. – Vol. 123, № 1. – P. K17–K20.

Kasai P.H., Otomo Y. Electron paramagnetic resonance studies of the ZnS–A and –B cen// J. Chem. Phys. – 1962. – Vol. 37, № 6. – P. 1263–1275.

Schreider J. et al. Direct confirmation of the Б–center model in ZnS by observation of hyperfine structure in EPR spectra // J. Chem. Phys. – 1965. – Vol. 42, № 5. – P. 1839–1841.

Dziesiaty K.L., Backs B.P. Ohmic and acoustoelectric current in the Hall effect for the investigation of bipolar conductivity // Phys. status solidi (a). – 1977. – Vol. 39, № 2. – P. 601–605.

Krol A., Nazarewicz W. Aluminium related point defects in wurtzite–type ZnS // J. Phys. C: Solid State Phys. – 1985. – Vol. 18, № 2. – P. 467–479.

Nirk T. et al. High temperature conductivity of CdSe and ZnSe in selenium atmosphere // Phys. status solidi (a). – 1972. – Vol. 10, № 1. – P. K27–K29.

Ged P. Thermodynamics of vapor phase Al doped ZnSe .// J. Phys. Chem. Solids. – 1979. – Vol. 40, № 6. – P. 439–444.

Watkins G.D. EPR observation of close Frenkel pairs in irradiated ZnSe // Phys Rev Lett. – 1974. – Vol. 33, № 4.– P. 223–225.

Lee K.M. et al. Optically detected magnetic resonance of zinc vacancy in ZnSe // Solid State Comm. – 1980. – Vol. 35, № 7. – P. 527–530.

Dunstan D.J. et al. Optically detected magnetic resonance of V– centre in ZnSe // Solid State Comm. – 1977. – Vol. 24, № 9. – P. 677–680.

Dunstan D.J. et al. Zinc vacancy–associated defects and donor–acceptor recombination in ZnSe // J. Phys. C: Solid State Phys. – 1980. – Vol. 13, № 34. – P. 6409–6419.

Rong F., Watkins G.D. Observation by optically detected magnetic resonance of Frenkel pairs in irradiated ZnSe // Phyi. Rev. Lett. – 1986. – Vol. 56, № 21. – P. 2310–2313.

Thomas D.G., Sadowski S.A. The high temperature conductivity of ZnTe in zinc vapor // S. Phys. Chem. Solids. – 1964. – Vol. 25, № 4. – P. 395–400.

Smith F.T.J. Carrier concentration and mobility in n– and p–type ZnTe–Al // Ibid· – 1971. – Vol. 9, № 13. – P. 957–960.

Title R.S., Morehead F.F. Self–compensation–limited conductivity in binary semiconductors II. n–ZnTe // Phys. Rev. – 1964. – Vol. 136, № 14. С. Б300–Б302.

Figielski J. et al. Electrical properties of p–CdSe layers obtained by the ion implantation of selenium // Thin Solid Films. – 1978. – Vol. 55. – P. 421–425.

Sootha G.D. et al. ESR study of oxygen radicals formed in cadmium sulphide // Phys. status solidi (a). – 1979. – Vol. 52, № 2. – P. KI25–K128.

Sootha G. D. et al. Electron and hole trapped in CdS // Ibid. – 1980. – Vol. 60, № 2. – P. 599– 606.

Boyn M. et al. Study of nonstoichiometry in undoped semi–insulating GaAs using precise lattice parameter measurements // Appl. Phys. Lett. – 1986. – Vol. 49, № 19. – P. 1251–1253.

Boer T.S., Nalesnik V.J. Photocapacitance and defects levels in gallium–doped zinc selenide // J. Phys. C: Solid State Phys. – 1983. – Vol. 16, № 35. – P. 6789–6797.

Hershman